| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory element for preventing drain disturbance and the over-erase of an NOR type flash memory, and to provide its operation method. <P>SOLUTION: The nonvolatile memory element comprises a semiconductor substrate 105, a first control gate electrode 135 on the semiconductor substrate 105, a first charge storage layer 125 interposed between the semiconductor substrate 105 and the first control gate electrode 135, a source region 140 defined on the semiconductor substrate 105 on one side of the first control gate electrode 135, a first auxiliary gate electrode 115 arranged on the other side of the first control gate electrode 135 and formed in the semiconductor substrate 105 while being recessed, a first drain region 145 defined on the semiconductor substrate 105 on one side of the first auxiliary gate electrode 115 opposite to the first control gate electrode 135, and a bit line 160 connected with the first drain region 145. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
