| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a double patterning process for printing dense lines by which adverse effects after first pattering and before second patterning are mitigated. <P>SOLUTION: In a first processing, a first semi-dense pattern of lines is printed in a first resist layer superimposed on a substrate with bottom anti-reflection coating applied. In a second processing, a second semi-dense pattern of lines is printed in a second resist layer provided over a cleared region. The first and the second semi-dense line patterns are positioned at an alternate position, and provide a desired dense pattern of lines and spaces. After development of a first resist, but before providing a second resist on the substrate, a surface conditioning of the bottom anti-reflection coating is applied to the cleared region between lines of a first resist material. A surface conditioning step improves adhesion of a feature of the second resist to a surface of the cleared region. <P>COPYRIGHT: (C)2008,JPO&INPIT |
