发明名称 |
SEMICONDUCTOR STRUCTURE INCLUDING STEPPED SOURCE/DRAIN REGION |
摘要 |
A semiconductor structure includes a stepped source and drain region located in part within a semiconductor substrate that preferably has a step in a direction of a gate electrode located over a channel region that adjoins the stepped source and drain region within the semiconductor substrate. A stepped portion of the stepped source and drain region covers an extension region within the stepped source and drain region.
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申请公布号 |
US2008185645(A1) |
申请公布日期 |
2008.08.07 |
申请号 |
US20070670100 |
申请日期 |
2007.02.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LUO ZHIJIONG;ZHU HUILONG;FANG SUNFEI;DYER THOMAS W. |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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