| 摘要 |
A challenge in outputting a voltage near the midpoint potential in a semiconductor switch which operates based on a low voltage power supply is to avoid a decrease in operation speed and a deterioration in accuracy of the output voltage which would be caused due to an increase in ON-resistance or occurrence of current leakage. Thus, a structure including a gray level generation circuit, an analog switch circuit and a backgate voltage control circuit is provided wherein the backgate voltage of each of an N-channel MOS transistor and a P-channel MOS transistor of the analog switch circuit to which the voltage of the gray level generation circuit is input is supplied from the backgate voltage control circuit which has an equal structure as that of the gray level generation circuit.
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