SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory in which memory elements are arranged three-dimensionally for a reduced chip area.

SOLUTION: The nonvolatile semiconductor memory comprises a plurarity of memory element groups which comprise memory elements each composed of a resistance variable element and a diode connected in series, a plurality of source lines connected to one-side ends of the plurality of memory elements in the memory element group. The plurality of source lines of the memory element group are plate-like conductor layers expanding two-dimensionally.

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