SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a contact liner film and equipped with a PMIS transistor which has a structure capable of supplying hydrogen to a gate insulating film effectively.

SOLUTION: The semiconductor device which has a P-type MIS transistor formed on an active region 100 includes a gate isolation 102 film; a gate electrode 103; a sidewall insulating film 112; a source-drain region 107; a contact liner film 109 formed so that the gate electrode 103 and the sidewall insulating film 112 might be covered; an interlayer insulating film 110; and a contact plug 111. The contact liner film 109 has a slit 109A prolonged from an upper face side to a corner at a position near the corner where the side face of the sidewall insulating film 112 and the upper face of the active region 100 cross with each other.

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