| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device by which the flatness of an interlayer insulating film is secured. <P>SOLUTION: The manufacturing method of the semiconductor device has a process for forming a lamination film in a first region 2 and a second region 3, a process for forming a nitride film 15 on the lamination film, a process for removing a first part of the nitride film 15 in the first region 2 so that a second part of the nitride film 15 in the second region 3 is left, a process for patterning the lamination film with the second part, forming a first gate 17 of a first transistor in the first region 2 and forming a lamination structure 18 having a lamination structure common to the first gate 17 in the second region 3, a process for forming interlayer insulating films 23 in the first region 2 and the second region 3 and a process for polishing the interlayer insulating films 23 by a CMP (Chemical Mechanical Polishing) method. <P>COPYRIGHT: (C)2008,JPO&INPIT |
