| 发明名称 |
EUV LIGHT SOURCE, EUV EXPOSURE DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an EUV light source capable of supplying effectively a liquid target which generates EUV light by suppressing an effect of debris. <P>SOLUTION: The EUV light source generates plasma from a target (LQ) and emits EUV light generated by plasma, and is provided with a linear member (101). The target is a liquid and the linear member is constructed so that the target is supplied along the linear member. <P>COPYRIGHT: (C)2008,JPO&INPIT |
| 申请公布号 |
JP2008181760(A) |
申请公布日期 |
2008.08.07 |
| 申请号 |
JP20070014247 |
申请日期 |
2007.01.24 |
| 申请人 |
NIKON CORP |
发明人 |
AOKI TAKASHI |
| 分类号 |
H05G2/00;G21K5/08;H01L21/027 |
主分类号 |
H05G2/00 |
| 代理机构 |
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