| 摘要 |
PROBLEM TO BE SOLVED: To avoid a rear pollution extensively over a large number of processes at each time regarding a manufacturing method for a semiconductor device. SOLUTION: When an inorganic film 5 configuring a tri-level resist 3 consisting of a lower-layer resist 4, an inorganic film 5, an upper-layer resist 6 used as an etching mask is formed in an etching process, the inorganic film 5 is also formed simultaneously on the rear of a substrate 1, and the inorganic film 5 formed on the rear of the substrate 1 is wet-etched after the etching process or after the completion of a subsequent manufacturing process. COPYRIGHT: (C)2008,JPO&INPIT
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