| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has less variation of characteristic change in a semiconductor device having an FLR structure. SOLUTION: The semiconductor device includes: an N base area 9 formed in a semiconductor substrate 7; a P well area P(0) that is formed in the semiconductor substrate 7 on the first main surface side of the semiconductor substrate 7; a plurality of P ring areas P(1)-P(n) that is formed surrounding the P well areas on the first main surface side thereof; an N stopper area SR that is formed surrounding the P ring areas on the first main surface side thereof; an oxide film 2 that is provided between the adjoining P ring areas on the first main surface side thereof; a polysilicon 3 arranged on the oxide film 2; an aluminum 4 that is arranged so as to be electrically connected to the P ring areas and the polysilicon 3; and an electrode 11 that is provided on a second main surface opposite to the first main surface of the semiconductor substrate 7. COPYRIGHT: (C)2008,JPO&INPIT
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