| 摘要 |
To reduce the leak current in the MOSFET connected between the pad and the ground. There are provided a pad PAD for an input or output signal, an n-type MOSFET M 1 a connected between the pad PAD and the ground and having its gate terminal and backgate connected in common, and a potential control circuit 10 that controls a potential Vb of the gate terminal and the backgate of the n-type MOSFET M 1 a based on a potential Vin of the pad PAD. The potential control circuit 10 comprises n-type MOSFETs M 2 and M 3 ; the n-type MOSFET M 1 a has its gate terminal and backgate connected to backgates and drains of the n-type MOSFETs M 2 and M 3 ; the n-type MOSFET M 2 has its source grounded and its gate terminal connected to the pad PAD via a resistance R; and the n-type MOSFET M 3 has its source connected to the pad PAD and its gate terminal grounded.
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