| 发明名称 |
TERMINATION TRENCH STRUCTURE FOR MOSGATED DEVICE AND PROCESS FOR ITS MANUFACTURE |
| 摘要 |
<p>A process for fabrication of a MOSgated device that includes a plurality of spaced trenches in the termination region thereof.</p> |
| 申请公布号 |
WO2008094497(A1) |
申请公布日期 |
2008.08.07 |
| 申请号 |
WO2008US01081 |
申请日期 |
2008.01.28 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION;MA, LING |
发明人 |
MA, LING |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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