Memory cell e.g. non-volatile two-bit-Trapping layer-memory cell, operating method for e.g. memory card, involves applying voltage between gate electrode and substrate section such that charge carrier is injected into memory element

摘要

The method involves applying a voltage to p-n junctions (114, 124) among a source region (112), a drain region (122) and a substrate section (130) such that an avalanche breakdown takes place at the respective p-n junction. Another voltage is applied between a gate electrode (170) and the substrate section such that a charge carrier (132) produced by the avalanche breakdown and injected into the substrate section is injected into a memory element that is arranged between the substrate section and the gate electrode. Independent claims are also included for the following: (1) a method for programming a memory cell (2) a method for deleting a memory cell (3) a semiconductor component with memory cells (4) an electronic system comprising the semiconductor component.