| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure for etching reaction with regard to an etching method for package product, especially a dry etching method utilizing a pattern mask. <P>SOLUTION: The structure includes a mask for protection from etching of a wafer region, and a sealing ring to be stuck below the lower surface of the mask. The mask has at least one air opening for exposing the etching region. Further, the mask is stuck to a wafer by the sealing ring. A method for forming a dry etching reaction mask is also provided. At first, a base material is prepared and a masking material is applied to both sides of the base material. The masking material is then patterned to form an opening. Subsequently, the base material is etched through at least one opening forming the mask opening and a mask hole. Finally, the masking material is removed. <P>COPYRIGHT: (C)2008,JPO&INPIT |
