| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a piezoelectric wafer by which the piezoelectric wafer can be processed thin to a uniform thickness. <P>SOLUTION: The method comprises: a sticking stage of sticking one main surface 11 of a crystal wafer 10 having main surfaces formed into mutually parallel planes on one plane portion 21 of a base member 20; a film forming stage of forming an anticorrosive film 30 on at least a flank 13 of the crystal wafer 10 stuck on the base member 20 and the other plane portion 22 and flank 23 of the base member 20; an etching stage of etching the other main surface 12 by dipping the crystal wafer 10 stuck on the base member 20 and having the anticorrosive film 30 formed in an etchant 40; an anticorrosive film peeling stage of peeling the anticorrosive film 30 at least off the crystal wafer 10 after the etching stage; and a wafer peeling stage of peeling the etched crystal wafer 10 off the base member 20. <P>COPYRIGHT: (C)2008,JPO&INPIT |
