| 发明名称 |
MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A memory device includes a lower electrode layer formed over a substrate, a resistance layer including a metal nitride layer formed over the lower electrode layer, and an upper electrode layer formed over the resistance layer.
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| 申请公布号 |
US2008185687(A1) |
申请公布日期 |
2008.08.07 |
| 申请号 |
US20080026322 |
申请日期 |
2008.02.05 |
| 申请人 |
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY |
发明人 |
HONG JIN-PYO;DO YOUNG-HO;KWAK JUNE-SIK;JEONG KOO-WOONG;PARK MIN-SU |
| 分类号 |
H01L29/86;H01L21/02 |
主分类号 |
H01L29/86 |
| 代理机构 |
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代理人 |
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