发明名称 Relaxed metal pitch memory architectures
摘要 A relaxed metal pitch architecture may include a bit line and a first active area string and a second active area string. The bit line may be directly coupled to the first active area string and to the second active area string. The relaxed metal pitch architecture may be applied to a non-volatile memory structure.
申请公布号 US2008186777(A1) 申请公布日期 2008.08.07
申请号 US20070703487 申请日期 2007.02.07
申请人 MICRON TECHNOLOGY, INC. 发明人 JONES LYLE D.;LINDSAY ROGER W.;PRALL KIRK D.
分类号 G11C11/34;H01L21/8239 主分类号 G11C11/34
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