| 摘要 |
A semiconductor memory device according to one example includes a first cell transistor series including memory cell transistor connected in series, a first selecting transistor whose one terminal is connected to one terminal of the first cell transistor series, a second selecting transistor connected between the other terminal of the first selecting transistor and a bit line, and a third selecting transistor connected between the other terminal of the first cell transistor series and a source line. The first and second selecting transistors have a first conductive film, an inter-electrode insulating film and a second conductive film which are stacked on a semiconductor substrate. In one of the first and second selecting transistors, the first and second conductive films are connected to each other, and in the other transistor, the first and second conductive films are separated from each other.
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