| 摘要 |
Disclosed herein is an insulated gate field effect transistor including: (A) a source/drain region and a channel formation region; (B) a gate electrode formed above the channel formation region; and (C) a gate insulating film; wherein the gate insulating film is composed of a gate insulating film main body portion formed between the gate electrode and the channel formation region, and a gate insulating film extension portion extending from the insulating film main body portion to a middle of a side surface portion of the gate electrode, and when a height of the gate electrode is H<SUB>Gate </SUB>and a height of the gate insulating film extension portion is H<SUB>Ins </SUB>with a surface of the channel formation region as a reference, a relationship of H<SUB>Ins</SUB><H<SUB>Gate </SUB>is fulfilled.
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