摘要 |
<p>Provided are a semiconductor device and a method for manufacturing the same, by which semiconductor device manufacture is facilitated, the number of pads can be increased and a semiconductor device thickness can be reduced. The semiconductor device is provided with an LSI chip; an insulating layer, which is arranged on the LSI chip, composed of a nonphotosensitive resin, and has a via hole at a position corresponding to an external connecting pad; and a wiring layer, which extends to the external connection pad through inside the via hole from above the insulating layer. At least a part of the via hole is formed by applying a laser beam onto the insulating layer.</p> |
申请人 |
NEC CORPORATION;NEC ELECTRONICS CORPORATION;MURAI, HIDEYA;KAYASHIMA, YUJI;MAEDA, TAKEHIKO;YAMAMICHI, SHINTARO;FUNAYA, TAKUO |
发明人 |
MURAI, HIDEYA;KAYASHIMA, YUJI;MAEDA, TAKEHIKO;YAMAMICHI, SHINTARO;FUNAYA, TAKUO |