发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>Provided are a semiconductor device and a method for manufacturing the same, by which semiconductor device manufacture is facilitated, the number of pads can be increased and a semiconductor device thickness can be reduced. The semiconductor device is provided with an LSI chip; an insulating layer, which is arranged on the LSI chip, composed of a nonphotosensitive resin, and has a via hole at a position corresponding to an external connecting pad; and a wiring layer, which extends to the external connection pad through inside the via hole from above the insulating layer. At least a part of the via hole is formed by applying a laser beam onto the insulating layer.</p>
申请公布号 WO2008093531(A1) 申请公布日期 2008.08.07
申请号 WO2008JP50343 申请日期 2008.01.15
申请人 NEC CORPORATION;NEC ELECTRONICS CORPORATION;MURAI, HIDEYA;KAYASHIMA, YUJI;MAEDA, TAKEHIKO;YAMAMICHI, SHINTARO;FUNAYA, TAKUO 发明人 MURAI, HIDEYA;KAYASHIMA, YUJI;MAEDA, TAKEHIKO;YAMAMICHI, SHINTARO;FUNAYA, TAKUO
分类号 H01L23/12;H01L23/14 主分类号 H01L23/12
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