PHASE CHANGE MATERIAL (PCM) MEMORY DEVICES WITH BIPOLAR JUNCTION TRANSISTORS AND METHODS FOR MAKING THEREOF

摘要

Methods for fabricating highly compact PCM memory devices are described herein. The methods may include forming a bipolar junction transistor (BJT) structure on a substrate including creating a base of the BJT structure on the substrate and creating an emitter of the BJT structure on top of the base opposite of the substrate. A heating element may then be constructed on the emitter of the BJT structure, wherein the heating element includes a material to generate heat when provided with an electrical current from the emitter. A phase change material (PCM) cell may then be built on the heating element opposite of the BJT structure.