| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method for suppressing impurity diffusion to a silicide layer, and for sufficiently transferring impurity in a silicon layer. SOLUTION: In a semiconductor device in which a gate electrode is formed through a gate oxide film on a semiconductor substrate, the gate electrode has a silicon layer formed so as to be brought into contact with the gate oxide film and a metal containing layer containing metal laminated on the silicon layer, and the silicon layer is provided with a first silicon layer formed at the gate oxide film side, and coped with impurity of a first conductive type and a second silicon layer laminated on the first silicon layer, and doped with no impurity of the first conductive type. COPYRIGHT: (C)2008,JPO&INPIT
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