发明名称 |
LATERAL TRENCH GATE FET WITH DIRECT SOURCE-DRAIN CURRENT PATH |
摘要 |
A field effect transistor includes a trench gate extending into a semiconductor region. The trench gate has a front wall facing a drain region and a side wall perpendicular to the front wall. A channel region extends along the side wall of the trench gate, and a drift region extends at least between the drain region and the trench gate. The drift region includes a stack of alternating conductivity type silicon layers.
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申请公布号 |
WO2008002879(A3) |
申请公布日期 |
2008.08.07 |
申请号 |
WO2007US72034 |
申请日期 |
2007.06.25 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION;JEON, CHANG-KI;DOLNY, GARY |
发明人 |
JEON, CHANG-KI;DOLNY, GARY |
分类号 |
H01L29/06;H01L29/78;H01L29/80 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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