| 摘要 |
A method for inspecting a surface defect on a semiconductor wafer and an atomic force microscope are provided to accurately inspect the shape and depth of the surface defect by employing a polarization device and a Normarski prism in a differential interference contrast microscope. A particle map with respect to a measuring target wafer is measured by using a particle counter(S210). A coordinate file of the measured defects in the wafer is converted into a coordinate file of an atomic force microscope(S220). The converted particle coordinate file is inputted into the atomic force microscope and the wafer is supplied to and aligned in the atomic force microscope(S230). Defects required for a shape inspection are selected from the particle map(S240), and then the atomic force microscope is moved(S250). Positions of the defects are verified by a differential interference contrast microscope installed in the atomic force microscope(S270). A defect image with respect to the position-verified defect is acquired by using a probe installed in the atomic force microscope(S280). A size, a height, or a depth of the defect are measured from the acquired image(S290). The differential interference contrast microscope includes a polarization device and a Normarski prism.
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