发明名称 ADAPTIVE DESIGN OF NANOSCALE ELECTRONIC DEVICES
摘要 A method of fabricating a semiconductor device so as to cause the device to have a desired transfer characteristic. Computations may be performed that predict a transfer characteristic of the semiconductor device for each of a plurality of different sets of values of available control parameters that may be used during the fabrication of the semiconductor device. A set of values of available control parameters that the computations predict will cause the semiconductor device to substantially provide the desired transfer characteristic may be identified, and the semiconductor device may be fabricated based on these identified values.
申请公布号 WO2008020892(A3) 申请公布日期 2008.08.07
申请号 WO2007US04790 申请日期 2007.02.23
申请人 UNIVERSITY OF SOUTHERN CALIFORNIA;LEVI, ANTHONY, F.J. 发明人 LEVI, ANTHONY, F.J.
分类号 G06F17/50;G06F17/11 主分类号 G06F17/50
代理机构 代理人
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