| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce program time by setting a program start voltage according to the moving path of a cell voltage. <P>SOLUTION: In a multi-value flash memory device, the method includes performing a program from a first start voltage set for the cell of a first voltage level (to S407), determining whether the program has been passed for the cell of the first voltage level based on a first verifying voltage (S411), performing the program again by sequentially increasing voltages if the program has not been passed, comparing a current program voltage with a second start voltage set for the cell of the second voltage level in step S417 and after if the program has been passed, performing the program from the current program voltage or the second start voltage, determining whether the program has been passed for the cell of the second voltage level based on a second verifying voltage (S425), and performing the program again by sequentially increasing voltages if the program has not been passed. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
