| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing composition more suitably usable in applications where a silicon carbide wafer such as a hexagonal silicon carbide single crystal wafer is polished. SOLUTION: The polishing composition comprises a vanadate such as ammonium vanadate, sodium vanadate and potassium vanadate and an oxygen donor such as hydrogen peroxide and ozone. The polishing composition preferably further comprises at least either one of abrasive grains and a pH regulator. COPYRIGHT: (C)2008,JPO&INPIT |
