| 摘要 |
PROBLEM TO BE SOLVED: To provide a tunneling magnetism detection element capable of increasing a resistance change rate (ΔR/R) especially. SOLUTION: A free magnetic layer 6 is laminated in the order of an enhancement layer 12, a first soft magnetic layer 13, a nonmagnetic metal layer 14 and a second soft magnetic layer 15 from the bottom on an insulation barrier layer 5 composed of Mg-Ti-O or Ti-O. The enhancement layer 12 is formed of Co-Fe for instance, the first soft magnetic layer 13 and the second soft magnetic layer 15 are formed of Ni-Fe for instance, and the non-magnetic metal layer 14 is formed of Ta for instance. A total thickness T3 for which the average thickness of the enhancement layer 12 and the average thickness of the first soft magnetic layer 13 is formed to be≥25Åand≤80Å. Thus, the resistance change rate (ΔR/R) which is stably higher than before is obtained. COPYRIGHT: (C)2008,JPO&INPIT
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