Charge trap memory device with blocking insulating layer having higher-dielectric constant and larger energy band-gap and method of manufacturing the same

摘要

A charge trap memory device according to example embodiments may include a tunnel insulating layer provided on a substrate. A charge trap layer may be provided on the tunnel insulating layer. A blocking insulating layer may be provided on the charge trap layer, wherein the blocking insulating layer may include a lanthanide (e.g., lanthanum). The blocking insulating layer may further include aluminum and oxygen, wherein the ratio of lanthanide to aluminum may be greater than 1 (e.g., about 1.5 to about 2). The charge trap memory device may further include a buffer layer provided between the charge trap layer and the blocking insulating layer, and a gate electrode provided on the blocking insulating layer.