THREE-DIMENSIONAL INTEGRATED CIRCUIT FOR ANALYTE DETECTION
摘要
The embodiments of the invention relate to a device having a first substrate comprising a transistor; a second substrate; an insulating layer in between and adjoining the first and second substrates; and an opening within the second substrate, the opening being aligned with the transistor; wherein the transistor is configured to detect an electrical charge change within the opening. Other embodiments relate to a method including providing a substrate comprising a first part, a second part, and an insulating layer in between and adjoining the first and second parts; fabricating a transistor on the first part; and fabricating an opening within the second part, the opening being aligned with the transistor; wherein the transistor is configured to detect an electrical charge change within the opening.
申请公布号
WO2008094287(A2)
申请公布日期
2008.08.07
申请号
WO2007US72424
申请日期
2007.06.28
申请人
INTEL CORPORATION;DATTA, SUMAN;RAMANATHAN, SHRIRAM;KAVALIEROS, JACK T.;BRASK, JUSTIN K.;BARNETT, BRANDON
发明人
DATTA, SUMAN;RAMANATHAN, SHRIRAM;KAVALIEROS, JACK T.;BRASK, JUSTIN K.;BARNETT, BRANDON