摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a piezoelectric vibrator which is extremely small in size and can obtain a resonance frequency of, for example, a band of tens of kHz. <P>SOLUTION: The method for manufacturing the piezoelectric vibrator 100 includes: a process for forming a first semiconductor layer on a board 2; a process for forming a second semiconductor layer on the first semiconductor layer; a first opening forming process for eliminating the second semiconductor layer and the first semiconductor layer in a formation area of a support part 4 and exposing a board; a process for forming a support part in the first opening; a process for forming a driving part 20 for generating the bending vibration of a vibrating part 10 on the second semiconductor layer; a process for patterning the second semiconductor layer and forming the vibrating part so as to make the support part as a base end and prevent the other end from coming into contact with the support part and a second opening for exposing the first semiconductor layer; and a process for eliminating the first semiconductor layer from a portion exposed by the second opening by an etching method to form a gap under the vibrating part wherein the driving part forming process has a first electrode forming process, a process for forming a piezoelectric body layer on the first electrode, and a process for forming a second electrode on the piezoelectric body layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |