| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting apparatus which has high reliability and is smaller, and a manufacturing method thereof. <P>SOLUTION: A light-emitting device (LED) made of an N-type semiconductor layer 2, a P-type semiconductor layer 3 and pad electrodes 4a, 4b, etc., is formed on the surface of a first semiconductor substrate 1 made of gallium arsenide (GaAs), etc. Insulating films 5 such as a silicon nitride film are formed on the side and rear surfaces of the first semiconductor substrate 1. Wiring layers 6 connected to the pad electrodes 4a, 4b are formed on the insulating films 5 along one part of the side and rear surfaces of the first semiconductor substrate 1. A protective layer 7 is formed so as to cover the insulating films 5 and the wiring layers 6. An opening is formed on a predetermined region of the protective layer 7, and ball-like conductive terminals 8 are formed on the wiring layer 6 in the opening. A second semiconductor substrate 11 having an opening 10 penetrating from the front surface to the rear surface is stuck on the first semiconductor substrate 1 via an adhesive 12 such as an epoxy resin, etc. <P>COPYRIGHT: (C)2008,JPO&INPIT |
