| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a flow sensor capable of properly enhancing sensitivity while restraining wasteful consumption of an electric power consumption. <P>SOLUTION: The flow sensor is formed with a silicon oxide film 20 in a semiconductor substrate 10. The flow sensor is formed with an upstream heater Rha, a downstream heater Rhb, lead parts L1-L6, an upstream thermometer Rka, and a downstream thermometer Rkb, on the silicon oxide film 20. The upstream heater Rha and the downstream heater Rhb are formed of single crystal silicon injected with boron, and line widths thereof are set to "7μm or more". Heat conductive members (not shown) having higher heat conductivity than that of the silicon oxide film 20 are provided as dummy patterns in the upstream heater Rha and the downstream heater Rhb. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
