| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus of which the film thickness in an incident light direction is made thinner to prevent deterioration in light gathering efficiency, thereby preventing a rise in manufacturing cost. SOLUTION: A semiconductor substrate 1 comprises a pixel region in which pixel cells comprising photodiodes 3 are arrayed, a pad region in which a pad 14 connected to lower layer wiring is formed, and a peripheral circuit region for transferring signals from the photodiode 3. The pixel region comprises a light shielding film 13a at the perimeter of the photodiode. The pixel region, the pad region, and the peripheral circuit region comprise multilayer wiring 6, 13a, and 13b formed on the upper part of the semiconductor substrate 1. The pad 14 and the light shielding film 13a are formed of top layers of the multilayer wiring. COPYRIGHT: (C)2008,JPO&INPIT
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