| 摘要 |
An amplification type solid-state image pickup device of the invention includes a plurality of photoelectric conversion sections 10 each having an embedded photodiode 1 and a transfer transistor 2 , a switched capacitor amplifier section 20 whose input side is connected to a charge detection node 8 to which output terminals of the plurality of photoelectric conversion sections 10 are connected in common, and a current amplification section 21 connected between the switched capacitor amplifier section 20 and a vertical signal line 9 . Signal charge from the plurality of photoelectric conversion sections 10 is converted into voltage by the switched capacitor amplifier section 20 , and the converted signal is current-amplified by the current amplification section 21 and outputted to the vertical signal line 9 . Thus, a less-noise, high-quality image can be obtained while a reduction of the pixel size is achieved by reducing the number of transistors per pixel.
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