| 摘要 |
A pattern forming method includes performing a first resist development during a first time period to a substrate obtained by coating a resist film having a predetermined thickness onto a predetermined film to be etched, measuring the film thickness of the resist film after the first resist development, writing a predetermined pattern corrected in dimension on the basis of an amount of reduction in thickness of the resist film on the resist film by using a charged particle beam, performing a second resist development during a second time period which is longer than the first time period to the substrate after writing the pattern, and etching the predetermined film to be etched by using the resist film after the second resist development as a mask.
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