发明名称 HIGH SPEED, LEAKAGE TOLERANT, DOUBLE BOOTSTRAPPED MULTIPLEXER CIRCUIT WITH HIGH VOLTAGE ISOLATION
摘要 A multiplexer circuit provided herein includes a plurality of pass devices coupled in parallel between a power supply and a ground supply. According to one embodiment, each pass device may include a first pair of transistors (210, 220), which is coupled in series between the power supply and the ground supply, and a second pair of transistors, (330.340) which is coupled to the first pair of transistors for controlling a current passed there through. In general, the second pair of transistors may be configured for increasing the amount of current passed through the first pair of transistors. For example, the second pair of transistors may utilize a bootstrapping effect to increase a pair of control voltages supplied to the gate terminals of the first pair of transistors. The increased control voltages function to over-drive the gate terminals of the first pair of transistors, thereby increasing the amount of current passed there through. A memory device comprising the multiplexer circuit and method for operating the multiplexer circuit are also provided herein.
申请公布号 WO2008070510(A3) 申请公布日期 2008.08.07
申请号 WO2007US85838 申请日期 2007.11.29
申请人 CYPRESS SEMICONDUCTOR CORP.;RAGHAVAN, VIJAY, KUMAR, SRINIVASA;HIROSE, RYAN, TASUO 发明人 RAGHAVAN, VIJAY, KUMAR, SRINIVASA;HIROSE, RYAN, TASUO
分类号 G11C8/10;G11C16/24 主分类号 G11C8/10
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