发明名称 FLOTOX-TYPE EEPROM
摘要 <p>There has been a problem of difficult cell layout in a double-cell system FLOTOX-type EEPROM design for miniaturization. A double-cell system FLOTOX type EEPROM is provided with a pair of floating gates (25a, 25b), two tunnel windows (30a, 30b), a common source (27), a common control gate (26) and select gates (29a, 29b), and a drain (28) is shared. Thus, the double-cell system FLOTOX type EEPROM designed to have high reliability and withstand voltage is provided.</p>
申请公布号 WO2008093640(A1) 申请公布日期 2008.08.07
申请号 WO2008JP51213 申请日期 2008.01.28
申请人 ROHM CO., LTD.;SEKIGUCHI, YUSHI 发明人 SEKIGUCHI, YUSHI
分类号 H01L21/8247;G11C16/04;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
代理机构 代理人
主权项
地址