| 摘要 |
<P>PROBLEM TO BE SOLVED: To test correctly each smoothing capacitor and each voltage dividing resistor which are connected with each of the gates of the respective transistors constituting a tandem structure. <P>SOLUTION: Each testing pad 20 is connected with each of the gates of respective LDMOS transistors 10 constituting a tandem structure, and further, each diode 60 is so connected in series with each voltage dividing resistor 50 connected between the respective two gates in a way that the current flows through each resistor 50. When testing the resistance value of each voltage dividing resistor 50, a predetermined voltage is so applied to each testing pad 20 as to give to each diode 60 its forward direction bias. Thereby, the current flowing path through each voltage dividing resistor 50 and each diode 60 is formed between the respective two testing pads 20. Also, when testing the leak of each smoothing capacitor 70, a predetermined voltage is so applied to each testing pad 20 as to give to each diode 60 its backward direction bias. Thereby, the current flowing path through each smoothing capacitor 70 is formed between the respective two testing pads 20. <P>COPYRIGHT: (C)2008,JPO&INPIT |
