发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To suppress a power supply noise efficiently in an LSI, specially the LSI having a multilayer mesh power supply structure. SOLUTION: A semiconductor device 100 comprises a first wiring layer and a second wiring layer. In the first wiring layer, a power supply feed line of a first potential is disposed in a first wiring direction along a logic cell. The second wiring layer is located in an upper layer of the first wiring layer, and is disposed in a second wiring direction different from the first wiring direction with a plurality of power supply feed lines of a second potential being paired adjacent to each other. A wiring of the second potential is located in the upper layer of the first wiring layer for connecting at least two of the plurality of power supply feed lines of the second potential in the second wiring layer, and the wiring of this second potential is disposed at a location overlapping with the power supply feed line of the first potential to form a capacity together with the power supply feed line of the first potential. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008182058(A) 申请公布日期 2008.08.07
申请号 JP20070014486 申请日期 2007.01.25
申请人 NEC ELECTRONICS CORP 发明人 ISHIKAWA HIROTAKA
分类号 H01L21/822;H01L21/3205;H01L21/82;H01L23/52;H01L27/04 主分类号 H01L21/822
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