| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-reliability semiconductor laser element, in which a kink level is improved by cutting of a primary transverse mode without making the ridge width narrow. SOLUTION: The semiconductor laser element is provided with a first ridge 12 constituted of a p-type AlGaInP clad layer 8 formed on a p-type AlGaInP clad layer 6 in a first region S1 when an n-type semiconductor substrate 2 between both cleavage surfaces is divided into a first region S1 and a second region S2, and a p-type AlGaInP clad layer 10; a second ridge 13, comprising a p-type AlGaInP clad layer 8 formed on the p-type AlGaInP clad layer 6 in the second region S2 and the p-type AlGaInP clad layer 10 formed on the p-type AlGaInP clad layer 8; and a pair of AlInP current narrowing layers 14 for holding the ridges 12, 13 formed on the p-type AlGaInP clad layers 6, 8. COPYRIGHT: (C)2008,JPO&INPIT
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