DIAMOND SINGLE CRYSTAL SUBSTRATE AND ITS PRODUCTION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a high-quality diamond single crystal substrate usable even for semiconductor use within a short time at a lower cost. SOLUTION: The diamond single crystal substrate is one comprising at least two layers of different nitrogen atom contents, consisting of at least a layer having a nitrogen atom content of 0-10 ppm based on carbon atoms and a layer having a nitrogen atom content of 5-100 ppm based on carbon atoms, wherein the nitrogen atom content of the layer of the nitrogen atom content of 5-100 ppm is higher than that of the layer of the nitrogen content of 0-10 ppm, and these layers are formed by adjusting the gas introducing amounts of gases containing nitrogen atoms in a vapor-phase synthesis method. COPYRIGHT: (C)2008,JPO&INPIT