发明名称 Methods of forming a span comprising silicon dioxide
摘要 Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
申请公布号 US2008188073(A1) 申请公布日期 2008.08.07
申请号 US20070724654 申请日期 2007.03.14
申请人 MICRON TECHNOLOGY, INC. 发明人 WELLS DAVID H.
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
主权项
地址