A III-nitride heterojunction semiconductor device that includes a power electrode that is electrically connected to a conductive substrate through a trench in the heterojunction thereof.
申请公布号
WO2007081932(A3)
申请公布日期
2008.08.07
申请号
WO2007US00490
申请日期
2007.01.09
申请人
INTERNATIONAL RECTIFIER CORPORATION;BEACH, ROBERT;BRIDGER, PAUL