| 摘要 |
PROBLEM TO BE SOLVED: To provide a covering formation agent for pattern minuteness for dissolving problems due to the occurrence of bacteria, or the like, in a wafer face after applying the covering formation agent for pattern minuteness, by suppressing variations in the minutene amount in minuteness processing of a resist pattern making a high aspect ratio, especially ultra-minuteness of 120 nm or smaller, without generating defect after minuteness processing, being managed, and maintaining superior resist pattern shape after minuteness processing, while maintaining the desired minuteness amount, and to provide a method of forming a minute pattern that uses the agent. SOLUTION: The covering formation agent for the pattern minuteness used for forming the minute pattern by being coated on a substrate having the photoresist pattern contains: (a) water-soluble polymer; and (b) at least one selected from 4th class ammonium hydroxide, alicyclic ammonium hydroxide and morpholinium hydroxide. A water-soluble polymer component is at least one monomer polymer and/or copolymer selected from N-vinylpyrrolidone and vinylacetate. COPYRIGHT: (C)2008,JPO&INPIT |
