| 摘要 |
PROBLEM TO BE SOLVED: To provide a covering formation agent for pattern minuteness for dissolving problems due to the occurrence of bacteria or the like in a wafer face after applying the covering formation agent for pattern minuteness, by suppressing the variations in a minuteness amount in minuteness processing of a resist pattern making a high aspect ratio, especially ultra-minuteness of 120 nm or less without generating defect after minuteness processing, being managed, and maintaining superior resist pattern shape after minuteness processing, while maintaining the desired minuteness amount, and to provide a method of forming a minute pattern that uses the agent. SOLUTION: The covering formation agent for the pattern minuteness used for forming the minute pattern by being coated on a substrate having the photoresist pattern contains: (a) water-soluble polymer; and (b) a carboxyl group-containing compound or its salt or at least one selected from an esterified matter, peroxide and peracid. COPYRIGHT: (C)2008,JPO&INPIT |
