发明名称 SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having marks which are formed without being affected by a fuse pattern, and to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device 50 includes: a passivation film 6 having an opening 3 and formed in contact with an insulating film 7; and a plurality of fuses 1 arrayed inside the opening 3. The passivation film 6 includes a plurality of marks 10a, 10b arrayed at prescribed intervals without penetrating the passivation film 6. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008182096(A) 申请公布日期 2008.08.07
申请号 JP20070015012 申请日期 2007.01.25
申请人 ELPIDA MEMORY INC;HITACHI ULSI SYSTEMS CO LTD 发明人 ASANO SHINTARO;FUKAHORI KAZUTOSHI;MIYATAKE SHINICHI
分类号 H01L21/82 主分类号 H01L21/82
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