发明名称 |
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having marks which are formed without being affected by a fuse pattern, and to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device 50 includes: a passivation film 6 having an opening 3 and formed in contact with an insulating film 7; and a plurality of fuses 1 arrayed inside the opening 3. The passivation film 6 includes a plurality of marks 10a, 10b arrayed at prescribed intervals without penetrating the passivation film 6. COPYRIGHT: (C)2008,JPO&INPIT
|
申请公布号 |
JP2008182096(A) |
申请公布日期 |
2008.08.07 |
申请号 |
JP20070015012 |
申请日期 |
2007.01.25 |
申请人 |
ELPIDA MEMORY INC;HITACHI ULSI SYSTEMS CO LTD |
发明人 |
ASANO SHINTARO;FUKAHORI KAZUTOSHI;MIYATAKE SHINICHI |
分类号 |
H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|