发明名称 Semiconductor device having variable operating information
摘要 A semiconductor device includes: a semiconductor substrate; multiple MOS type first transistors coupled in parallel with a current path; and a nonvolatile memory for memorizing operating information. Each transistor includes first and second electrodes and a gate electrode for controlling current flowing therebetween. Based on the operating information, each first transistor is selectively set to an active state. When the transistors provide a single transistor, an effective channel width of the single transistor is variable in accordance with the number of the first transistors under the active state.
申请公布号 US2008185629(A1) 申请公布日期 2008.08.07
申请号 US20070717166 申请日期 2007.03.13
申请人 DENSO CORPORATION 发明人 NAKANO TAKASHI;KANAYAMA MITSUHIRO;ITABASHI TOORU;TAKAHASHI SHIGEKI;AKAGI NOZOMU
分类号 H01L29/788 主分类号 H01L29/788
代理机构 代理人
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