A TRANSISTOR WITH EMBEDDED SILICON/GERMANIUM MATERIAL ON A STRAINED SEMICONDUCTOR ON INSULATOR SUBSTRATE

摘要

By combining a respectively adapted lattice mismatch between a first semiconductor material (4, 104) in a channel region (112) and an embedded second semiconductor material (9, 109) in an source/drain region (110) of a transistor, the strain transfer into the channel region (112) is increased. The lattice mismatch may be adapted by a biaxial strain in the first semiconductor material (4, 104). The lattice mismatch may be adjusted by a biaxial strain in the first semiconductor material (4, 104). In particular, the strain transfer of strain sources including the embedded second semiconductor material (9, 109) as well as a strained overlayer is increased. According to one illustrative embodiment, regions of different biaxial strain may be provided for different transistor types.