| 摘要 |
A semi-conductor such as silicon is coated with a layer of a dielectric compound such as SiO2, Al2O3, CeO2, Ta2O5, TiO2, ThO2, ZrO2 or MgF2 by a reactive sputtering process in which the metallic component of the dielectric compound forms the cathode and the other component forms the low pressure reacting gas. In an example, a coating of Al2O3 is formed in a silicon diode in an evacuated chamber by sputtering an aluminium cathode in an oxidizing atmosphere. Mixed dielectric coatings may be applied by sputtering material from a plurality of cathodes or from a single cathode consisting of a suitable alloy. |
